outline drawing and circuit diagram dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 1.14+0.04/-0.02 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 2.440.01 62.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 j 0.81 20.5 k 0.55 14.0 l 0.26 dia. dia. 6.5 m m6 metric m6 dimensions inches millimeters n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.83 21.2 s 0.30 7.5 t 0.02 0.5 u 0.16 4.0 v 0.11 2.8 w 0.33 8.5 x 0.21 5.3 y 0.47 12.0 z 0.85 21.5 description: powerex super fast recovery dual diode modules are designed for use in applications requiring fast switching. the modules are isolated for easy mounting with other components on common heatsinks. features: discrete super-fast recovery free-wheel diode isolated copper baseplate for easy heat sinking rohs compliant applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. RM400DY-24S is a 1200v (v ces ), 400 ampere super fast recovery dual diode power module. current rating v ces type amperes volts (x 50) rm 400 24 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com super fast recovery dual diode module 400 amperes/1200 volts RM400DY-24S 1 5/12 rev. 0 a w f f n j g g h e b l (4 places) d m (3 places) k k k p p p q q v t z y x u u c s r c2e1 e2 c1 g2 e2 e1 g1 c1 g2 (nc) e2 (nc) e1 (nc) g1 (nc) e2 c2e1 di2 di1 label tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2
absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units repetitive peak reverse voltage v rrm 1200 volts non-repetitive peak reverse voltage v rsm 1200 volts reverse dc blocking voltage v r(dc) 960 volts dc forward current (dc, t c = 68c) *1,*2 i dc 400 amperes surge non-repetitive forward current i fsm 2000 amperes (1 cycle of half wave at 60hz, peak value, t j = 25c start, v rm = 0v) current square time for fusing i 2 t 1.66 x 10 4 a 2 s (t w = 8.3ms, t j = 25c start, value for one cycle of surge current) isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts junction temperature *1 t j -40 ~ +150 c storage temperature t stg -40 ~ +125 c *1 junction temperature (t j ) should not increase beyond t j(max) rating. *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 0 0 20.6 33.6 46.6 di1 di1 di1 di2 di2 di2 65.8 35.3 31.8 58.4 45.0 label side di1 / di2: fwdi each mark points to the center position of each chip. RM400DY-24S super fast recovery dual diode module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 5/12 rev. 0
electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units reverse current i rrm v r = v rrm , t j = 125c 10 ma forward voltage v f i f = 400a, t j = 25c *3 2.6 3.3 volts reverse recovery time t rr v rm = 600v, i f = 400a, 250 ns reverse recovery charge q rr di/dt = 3500 a/s, inductive load 19 c reverse recovery energy per pulse e rr t j = 125c, inductive load 34 mj internal lead resistance r aa' + kk' main terminals-chip, 0.75 m? per diode,t c = 25c thermal resistance characteristics , t j = 25c unless otherwise specifed thermal resistance, junction to case *2 r th (j-c) d per diode 0.062 k/w contact thermal resistance, r th(c-s) thermal grease applied *4 0.018 k/w case to heatsink *2 (per 1/2 module) mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb m s mounting to heatsink, m6 screw 31 35 40 in-lb weight m 580 grams flatness of baseplate e c on centerline x, y *5 -100 + 100 m *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 pulse width and repetition rate should be such as to cause negligible temperature rise. *4 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *5 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. 0 0 20.6 33.6 46.6 di1 di1 di1 di2 di2 di2 65.8 35.3 31.8 58.4 45.0 label side di1 / di2: fwdi each mark points to the center position of each chip. x ? concave 3 mm + convex ? concave + convex heatsink side heatsink side bottom y RM400DY-24S super fast recovery dual diode module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 5/12 rev. 0
0 1.0 2.0 4.0 3.0 10 1 forward voltage, v f , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 3 forward current, i dc , (amperes) t j = 25c t j = 125c time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.062k/w (fwdi) normalized transient thermal impedance, z th(j-c') v rm = 600v -di/dt = 3500 a/ s inductive load forward current, i f , (amperes) reverse recivery energy, e rr , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 3 reverse recovery energy characteristics (typical) forward current, i dc , (amperes) reverse recovery characteristics (typical) 10 4 10 1 10 2 10 3 10 2 10 3 10 2 10 1 10 3 v rm = 600v -di/dt = 3500 a/ s t j = 25c inductive load i rr t rr reverse recovery current, i rr (amperes) reverse recovery time, t rr (ns) forward current, i dc , (amperes) reverse recovery characteristics (typical) 10 4 10 1 10 2 10 3 10 2 10 3 10 2 10 1 10 3 v rm = 600v -di/dt = 3500 a/ s t j = 125c inductive load i rr t rr reverse recovery current, i rr (amperes) reverse recovery time, t rr (ns) rate of current charge, di/dt, ( a/ s ) reverse recovery characteristics (typical) 10 3 10 2 10 3 10 2 10 1 10 4 v rm = 600v i f = 400a t j = 25c inductive load i rr t rr reverse recovery current, i rr (amperes) reverse recovery time (ns) rate of current charge, di/dt, ( a/ s ) reverse recovery characteristics (typical) 10 3 10 2 10 3 10 2 10 1 10 4 v rm = 600v i f = 400a t j = 125c inductive load i rr t rr reverse recovery current, i rr (amperes) reverse recovery time (ns) t j = 25c t j = 125c v rm = 600v i f = 400a inductive load rate of current charge, di/dt, ( a/ s ) reverse recivery energy, e rr , (mj/pulse) 10 2 10 1 10 2 10 3 10 0 10 4 reverse recovery energy characteristics (typical) t j = 25c t j = 125c RM400DY-24S super fast recovery dual diode module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 5/12 rev. 0
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